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Atomic Layer Deposition in Semiconductor Industry
Applications
| Applications | Specific Purpose |
| Semiconductor | Logic device (MOSFET), High-K gate dielectrics / gate electrode |
| High-K capacitive material / capacitive electrode of Dynamic Random Access | |
| Metal interconnection layer, metal passivation layer, metal seed crystal layer, metal | |
| Non-volatile memory:flash memory, phase change memory, resistive random access |
Working Principle
Atomic layer deposition (ALD) technology, also known as atomic layer epitaxy (ALE) technology, is a chemical
vapor film deposition technology based on ordered and surface self-saturated reaction. ALD is applied in
semiconductor field. As Moore’s Law evolves constantly and the feature sizes and etching grooves of integrated
circuits have been constantly miniaturizing, the smaller and smaller etching grooves have been bringing severe
challenges to the coating technology of grooves and their side walls.Traditional PVD and CVD process have been
unable to meet the requirements of superior step coverage under narrow line-width. ALD technology is playing an
increasingly important role in semiconductor industry due to its excellent shape-keeping, uniformity and higher step
coverage.
Features
| Model | ALD-SEM-X—X |
| Coating film system | AL2O3, TiO2, ZnO, etc |
| Coating temperature range | Normal temperature to 500℃ (Customizable) |
| Coating vacuum chamber size | Inner diameter: 1200mm, Height: 500mm (Customizable) |
| Vacuum chamber structure | According to customer’s requirements |
| Background vacuum | <5×10-7mbar |
| Coating thickness | ≥0.15nm |
| Thickness control precision | ±0.1nm |
| Coating size | 200×200mm² / 400×400mm² / 1200×1200 mm², etc |
| Film thickness uniformity | ≤±0.5% |
| Precursor and carrier gas | Trimethylaluminum, titanium tetrachloride, diethyl zinc, pure water, |
| Note: Customized production available. | |
Coating Samples
Process Steps
→ Place the substrate for coating into the vacuum chamber;
→ Vacuumize the vacuum chamber at high and low temperature, and rotate the substrate synchronously;
→ Start coating: the substrate is contacted with precursor in sequence and without simultaneous reaction.
→ Purge it with high-purity nitrogen gas after each reaction;
→ Stop rotating the substrate after the film thickness is up to standard and the operation of purging and cooling is
completed, then take out the substrate after the vacuum breaking conditions are met.
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